Wednesday, February 3, 2016

Free Download E-book Electronic Devices and Circuit Theory (11th Edition) by Robert L. Boylestad

ElcoHow. - This is a book of Electronic Devices and Circuit Theory (11th Edition) that authored by Robert L. Boylestad  (Author), Louis Nashelsky (Author). This book very popular for electronic student and hobbyist because it is easy to learn and give many exercise and example with these solution giving.

Electronic Devices and Circuit Theory 11th Edition Book Cover

In here we will give you global information like preface and what new in 11th edition, and then we will give you link to take free download e-book Electronic Devices and Circuit Theory (11th Edition) by Robert L. Boylestad from Mediafire.

Preface of this book

The preparation of the preface for the 11th edition resulted in a bit of reflection on the 40 years since the first edition was published in 1972 by two young educators eager to test their ability to improve on the available literature on electronic devices. Although one may prefer the term semiconductor devices rather than electronic devices, the first edition was almost exclusively a survey of vacuum-tube devices—a subject without a single section in the new Table of Contents. The change from tubes to predominantly semiconductor devices took almost five editions, but today it is simply referenced in some sections. 

It is interesting, however, that when field-effect transistor (FET) devices surfaced in earnest, a number of the analysis techniques used for tubes could be applied because of the similarities in the ac equivalent models of each device. We are often asked about the revision process and how the content of a new edition is defined. In some cases, it is quite obvious that the computer software has been updated, and the changes in application of the packages must be spelled out in detail. This text was the first to emphasize the use of computer software packages and provided a level of detail unavailable in other texts. 

With each new version of a software package, we have found that the supporting literature may still be in production, or the manuals lack the detail for new users of these packages. Sufficient detail in this text ensures that a student can apply each of the software packages covered without additional instructional material. The next requirement with any new edition is the need to update the content reflecting changes in the available devices and in the characteristics of commercial devices. This can require extensive research in each area, followed by decisions regarding depth of coverage and whether the listed improvements in response are valid and deserve recognition. 

The classroom experience is probably one of the most important resources for defining areas that need expansion, deletion, or revision. The feedback from students results in marked-up copies of our texts with inserts creating a mushrooming copy of the material. Next, there is the input from our peers, faculty at other institutions using the text, and, of course, reviewers chosen by Pearson Education to review the text. One source of change that is less obvious is a simple rereading of the material following the passing of the years since the last edition. Rereading often reveals material that can be improved, deleted, or expanded.

For this revision, the number of changes far outweighs our original expectations. However, for someone who has used previous editions of the text, the changes will probably be less obvious. However, major sections have been moved and expanded, some 100-plus problems have been added, new devices have been introduced, the number of applications has been increased, and new material on recent developments has been added throughout the text. We believe that the current edition is a significant improvement over the previous editions. 

As instructors, we are all well aware of the importance of a high level of accuracy required for a text of this kind. There is nothing more frustrating for a student than to work a problem over from many different angles and still find that the answer differs from the solution at the back of the text or that the problem seems undoable. We were pleased to find that there were fewer than half a dozen errors or misprints reported since the last edition. When you consider the number of examples and problems in the text
along with the length of the text material, this statistic clearly suggests that the text is as error-free as possible. Any contributions from users to this list were quickly acknowledged, and the sources were thanked for taking the time to send the changes to the publisher and to us. Although the current edition now reflects all the changes we feel it should have, we expect that a revised edition will be required somewhere down the line. We invite you to respond to this edition so that we can start developing a package of ideas and thoughts that will help us improve the content for the next edition. We promise a quick response to your comments, whether positive or negative.

  1. Throughout the chapters, there are extensive changes in the problem sections. Over 100 new problems have been added, and a significant number of changes have been made to the existing problems.
  2. A significant number of computer programs were all rerun and the descriptions updated to include the effects of using OrCAD version 16.3 and Multisim version 11.1. In addition, the introductory chapters are now assuming a broader understanding of computer methods, resulting in a revised introduction to the two programs.
  3. Throughout the text, photos and biographies of important contributors have been added. Included among these are Sidney Darlington, Walter Schottky, Harry Nyquist, Edwin Colpitts, and Ralph Hartley.
  4. New sections were added throughout the text. There is now a discussion on the impact of combined dc and ac sources on diode networks, of multiple BJT networks, VMOS and UMOS power FETs, Early voltage, frequency impact on the basic elements, effect of RS on an amplifier’s frequency response, gain-bandwidth product, and a number of other topics.
  5. A number of sections were completely rewritten due to reviewers’ comments or changing priorities. Some of the areas revised include bias stabilization, current sources, feedback in the dc and ac modes, mobility factors in diode and transistor response, transition and diffusion capacitive effects in diodes and transistor response characteristics, reverse-saturation current, breakdown regions (cause and effect), and the hybrid model.
  6. In addition to the revision of numerous sections described above, there are a number of sections that have been expanded to respond to changes in priorities for a text of this kind. The section on solar cells now includes a detailed examination of the materials employed, additional response curves, and a number of new practical applications. The coverage of the Darlington effect was totally rewritten and expanded to include detailed examination of the emitter-follower and collector gain configurations. The coverage of transistors now includes details on the cross-bar latch transistor and carbon nanotubes. The discussion of LEDs includes an expanded discussion of the materials employed, comparisons to today’s other lighting options, and examples of the products defining the future of this important semiconductor device. The data sheets commonly included in a text of this type are now discussed in detail to ensure a well-established link when the student enters the industrial community.
  7. Updated material appears throughout the text in the form of photos, artwork, data sheets, and so forth, to ensure that the devices included reflect the components available today with the characteristics that have changed so rapidly in recent years. In addition, the parameters associated with the content and all the example problems are more in line with the device characteristics available today. Some devices, no longer available or used very infrequently, were dropped to ensure proper emphasis on the current trends.
  8. There are a number of important organizational changes throughout the text to ensure the best sequence of coverage in the learning process. This is readily apparent in the early dc chapters on diodes and transistors, in the discussion of current gain in the ac chapters for BJTs and JFETs, in the Darlington section, and in the frequency response chapters. It is particularly obvious in Chapter 16 , where topics were dropped and the order of sections changed dramatically.
Content of this edition
  • Preface v
  • CHAPTER 1: Semiconductor Diodes 1
  • CHAPTER 2: Diode Applications 55
  • CHAPTER 3: Bipolar Junction Transistors 129
  • CHAPTER 4: DC Biasing—BJTs 160
  • CHAPTER 5: BJT AC Analysis 253
  • CHAPTER 6: Field-Effect Transistors 378
  • CHAPTER 7: FET Biasing 422
  • CHAPTER 8: FET Amplifiers 481
  • CHAPTER 9: BJT and JFET Frequency Response 545
  • CHAPTER 10: Operational Amplifiers 607
  • CHAPTER 11: Op-Amp Applications 653
  • CHAPTER 12: Power Amplifiers 683
  • CHAPTER 13: Linear-Digital ICs 722
  • CHAPTER 14: Feedback and Oscillator Circuits 751
  • CHAPTER 15: Power Supplies (Voltage Regulators) 783
  • CHAPTER 16: Other Two-Terminal Devices 811
  • CHAPTER 17: pnpn and Other Devices 841
  • Appendix A: Hybrid Parameters—Graphical
  • Determinations and Conversion Equations (Exact and Approximate) 879
  • Appendix B: Ripple Factor and Voltage Calculations 885
  • Appendix C: Charts and Tables 891
  • Appendix D: Solutions to Selected Odd-Numbered Problems 893
  • Index 901
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